Near-field microscopy with a semiconductor probe tip

M. Hipp; J. Mertz; J. Mlynek; O. Marti

International Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 1994),
paper QThI3

Near-field microscopy with a semiconductor probe tip

M. Hipp, J. Mertz, J. Mlynek, and O. Marti

International Quantum Electronics Conference 1994

Anaheim, California United States
8–13 May 1994
ISBN: 1-55752-342-8

From the session
Novel Spectroscopy and New Structures (QThI)

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M. Hipp, J. Mertz, J. Mlynek, and O. Marti, "Near-field microscopy with a semiconductor probe tip," in International Quantum Electronics Conference, J. Shah, C. Weiman, R. Freman, and J. Fujimoto, eds., Vol. 9 of OSA Technical Digest (Optica Publishing Group, 1994), paper QThI3.

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Abstract

We present quantitative measurements of mechanical forces induced by evanescent light on a semiconductor probe tip by the surface-photo voltage effect (SPV)¹ The semiconducting tip is used as a sensitive subwavelength-sized light detector. Scanning techniques allow the profiling of laterally inhomogeneous light distributions, such as standing wave patterns.

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