Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1994),
  • paper QThG2

Frequency-dependent dephasing in an inverted semiconductor

Not Accessible

Your library or personal account may give you access

Abstract

Recent theoretical calculations have shown a strong k dependence of the dephasing time across the gain region at the transparency point and in the absorption region of an inverted semiconductor.1 In the presence of a dense plasma, it is predicted that the dephasing rate approaches zero at the transparency point and increases in both the gain and absorption regions. We have obtained the first complete experimental verification of this phenomenon by using femtosecond-DFWM and spectral-hole- burning measurements in an optically excited semiconductor.

© 1994 Optical Society of America

PDF Article
More Like This
Dephasing in the gain region of II-VI semiconductor quantum dots

H Giessen, G Mohs, YZ Hu, N Peyghambarian, Uwoggon, C Klingshirn, P Thomas, and SW Koch
ME4 International Quantum Electronics Conference (IQEC) 1996

Temperature Dependent Optical Dephasing in Disordered Semiconductors

D. Bennhardt, V. Heuckeroth, and P. Thomas
PTh045 International Quantum Electronics Conference (IQEC) 1992

Femtosecond pulse compression and adiabatic following in semiconductor amplifiers

R. A. Indik, J. V. Moloney, R. Binder, A. Knorr, and S. W. Koch
QThB7 European Quantum Electronics Conference (EQEC) 1994

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved