Abstract

Hot-electron effects such as ballistic transport and transient velocity overshoot have been utilized in recent years in the conceptualization of numerous high-speed semiconductor devices. Therefore, substantive physical information on the behavior of velocity overshoot is of great importance in the design of ultra-small, high-speed transistors. In the last year, transient velocity overshoot in GaAs has been successfully studied using a terahertz radiation technique.¹ We have now applied the same technique to investigate time-domain velocity overshoot in Si.

© 1994 Optical Society of America