Abstract

We will present our study on the optical nonlinearity and fast exciton dynamics in porous silicon. Efficient anisotropic infrared-upconversion luminescence generated from porous silicon layer due to its strong optical nonlinear polarizability has been observed and could be explained by the quantum confinement effect.^1,2 The high optical nonlinear response of porous silicon by the localization of exciton arising from the nanometer structure of that material.^3,4 Our recent studies are engaged on the temperature-dependent and picosecond time-resolved photoluminescence measurements. Several porous silicon samples with different post-treatments for obtaining different surface-related states are studied with temperatures ranged from 77 K to 410 K.

© 1994 Optical Society of America