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  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper QTUH19

Quantum confinement effect of perfect GaAs wire crystals

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Abstract

Microstructures exhibiting quantum confinement effects in two or three dimensions have in the last few years attracted much attention. In particular, GaAs quantum well wires with AlGaAs barriers have been extensively studied because of their potential use in electronic and optical devices.1,2 Microcrystals such as CuCl embedded in a NaCl matrix have also been investigated because they are expected to show a large nonlinear effect caused by the infinite potential barriers and abrupt dielectric difference between the microcrystal and surrounding matrix.3

© 1990 Optical Society of America

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