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Conferences > IQEC > 1990 > QTHF > QTHF4
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper QTHF4

Structure and properties of CaF2/GaAs (100) heterojunctions

T. TIEDJE, K. M. COLBOW, D. ROGERS, and W. EBERHARDT

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Abstract

Fluorite (CaF2) is a wide band gap dielectric, nearly lattice matched to GaAs (3.5%), that can be grown epitaxially on GaAs. We have used synchrotron radiation in the 1.6- 60-nm wavelength range and photoelectron spectroscopy to study the electronic properties and structure of the CaF2/GaAs interface as a prototypical example of the broader class of alkaline earth halide/III-IV semiconductor heterojunction. Such heterojunctions are of possible interest in optical and electrooptic devices.

© 1990 Optical Society of America

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