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Optica Publishing Group
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper QPDP16

Hot Exciton Effects in CdxZn1-xTe/ZnTe Multiple Quantum Wells

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Abstract

We have observed strong hot exciton effects in new II-VI quantum well structures. The effects show up as sharp lines sitting on top of the broader (10meV) intrinsic exciton luminescence at low temperature. The sharp lines are separated from the excitation laser photon energy by an integral number of LO phonons. The sharp lines are identical to those expected in resonant Raman scattering (RRS). We show definitively, however, by a combination of time resolved luminescence and time resolved four wave mixing that these lines are due to exciton luminescence and not due to Raman Scattering. The sharp line exciton luminescence, in addition, results from the creation of hot excitons created high in the band by phonon-assisted absorption [1]. The luminescence is dominated by hot exciton creation and relaxation and not by hot carrier relaxation as is the norm in III-V materials.

© 1990 Optical Society of America

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