Abstract
The possibility of far-infrared semiconductor lasere based on inter-valence band transitions has been demonstrated since 1980/1-4/. In a p-Ge crystal near liquid He temperature electrical pumping of the order of 100 kW/cm3 sets Ac heavy holes in “streaming” (i.e. interrupted ballistic) motion, additionally a magnetic field of about 1 T keeps the light holes on truly ballistic orbits. A broad gain region from 20 to 200 cm-1 results from the properties of the valence band structure and the inelastic scattering with optical phonons (Fig. 1). Lasing in parts of this spectrum has been described by assigning an inhomogeneous gain characteristic to the inter-valence band transitions. A dominantly inhomogeneous broadening has however teen demonstrated only for passive p-Ge material /5/.
© 1990 Optical Society of America
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