Abstract

Picosecond pulse generation technology in semiconductor lasers is important for certain applications such as ultra-high speed optical communication systems. For this purpose, the mode locking method[1], the Q-switching method[2] and the gain switching method[3] have been investigated. In contrast to the mode locking method and the Q-switching method, the gain switching method has the advantage that no external cavity and no sophisticated fabrication technology are required. The shortest light pulse achieved so far in semiconductor lasers without external cavities is 4 psec by the gain switching method[4].

© 1988 Optical Society of America