Abstract
The semiconductor injection laser diode has now reached a high level of maturity after a relatively long development stage. It is significant to note that the first laser diodes were produced only two years after the first working laser of any type was demonstrated. However, the laser diode has lagged behind other lasers in development, in part, due to the difficulties associated with the inherent nature of direct bandgap III-V semiconductor technology. Perhaps of greater significance, contributing to the slowed development, is the fact that stimulated emission in semiconductor materials and the associated optical output intensity (as well as the high generation rates, gain, and heat dissipation requirements) are higher than in almost any other lasing media.
© 1988 Optical Society of America
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