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  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1987),
  • paper TUEE3

Low-dimensional microstructure in GaAs semiconductors

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Abstract

The most remarkable advance in recent semiconductor technology is the creation of what are known as artificial structure materials, such as superlattices and quantum wires. These synthetics have ted to new physical phenomena, including room temperature excitons and the quantized Hall effect. New optical and electronic devices including quantum-well lasers and high-speed transistors (HEMT, HBT) have also been developed by these techniques. However, the conventional technologies are still insufficient for the fine control of atomic layers and making quantum wire. We review recent results of our research in two directions: atomic-order control of crystal growth and very fine lateral definition.

© 1987 Optical Society of America

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