Abstract

GaAs-GaAlAs quantum wells grown by molecular beam epitaxy are used for processing quantum well wires (QWWs) and quantum well boxes (QWBs). A localized implantation enhanced interdiffusion (IEI) process¹ is applied to the quantum well material. With the IEI, a Ga⁺ ion implantation is used to introduce point defects which promote a large enhancement of the Ga and Al interdiffusion across the interface. Rapid thermal annealing is used to control the amount of interdiffusion and completely recover the quantum well intrinsic luminescence in the interdiffused areas.¹ The luminescence shifts to higher energy associated with the interdiffusion is used to laterally tailor the material effective band gap and produce QWWs and QWBs.

© 1987 Optical Society of America