Ultrafast electronic processes in amorphous silicon

D. HULIN; A. MIGUS; A. ANTONETTI; PHILIPPE M. FAUCHET; S. WAGNER

International Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 1987),
paper TUAA4

Ultrafast electronic processes in amorphous silicon

D. HULIN, A. MIGUS, A. ANTONETTI, PHILIPPE M. FAUCHET, and S. WAGNER

International Quantum Electronics Conference 1987

Baltimore, Maryland United States
26 April–1 May 1987
ISBN: 0-936659-51-3

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D. HULIN, A. MIGUS, A. ANTONETTI, P. M. FAUCHET, and S. WAGNER, "Ultrafast electronic processes in amorphous silicon," in International Quantum Electronics Conference, T. Hansch, D. Grischkowsky, D. Pritchard, and C. Shank, eds., Vol. 21 of OSA Technical Digest (Optica Publishing Group, 1987), paper TUAA4.

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Abstract

We report the results of our investigation of ultrafast electronic processes in high-quality amorphous hydrogenated silicon at room temperature. In this material of technological importance, the transport properties are strongly influenced by thermalization in the extended and localized states and by the transition from extended to localized states across the mobility edge.¹

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