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  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1987),
  • paper THGG41

Studying infrared-material photoabsorption properties by photothermal deflection spectroscopy

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Abstract

In a previous paper1 we reported the results of measurements of the absorption coefficients of low-absorption IR materials including GaAs, NaCl, Si, and Ge monocrystals by photoacoustic spectroscopy (PAS). Jackson et al.2 introduced the photothermal deflection spectroscopic method (PDS) for detection of absorption of electromagnetic radiation in low-absorption materials and showed that PDS in many aspects is superior to the existing techniques in the sense of the limited size of the sample, the physical contact of the sample with the detector, and the required much lower absorption coefficient of the window of the resonance cell in the PAS method.

© 1987 Optical Society of America

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