Abstract
Today’s semiconductor lasers are far from ideal. There is a serious asymmetry between the very light conduction band mass and the very heavy valence band mass. (In principle, both masses should be as light as possible.) In laser threshold conditions, the hole occupation remains classical even while the electrons are degenerate. This results in a significant penalty in terms of threshold current density, carrier injection level, and excess Auger and other nonradiative recombination. This is only one of a series of problems which can be addressed by band structure engineering.
© 1987 Optical Society of America
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