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  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1987),
  • paper FMM2

Optimization of gain at 108.9 nm in Xe III

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Abstract

Kapteyn el al.1 recently reported the first observation of gain at 108.9 nm in Xe2+. We studied the dependence of this gain on pressure, pumping, pulse length, and pump energy. By adjusting these parameters we achieved a gain of exp(3.2) in a natural isotopic mix of Xe using only 0.56 J of 1064-nm energy on target. This represents an efficiency improvement of ~100 over previous results. With 8.5 J on target a total gain of exp(6.4) was measured.

© 1987 Optical Society of America

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