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Conferences > IQEC > 1986 > WDD > WDD4
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1986),
  • paper WDD4

Absorption modulation in GaAs doping superlattices

T. B. SIMPSON, C. A. PENNISE, B. E. GORDON, J. E. ANTHONY, D. SMITH, and T. R. AUCOIN

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Abstract

Doping superlattices, consisting of thin alternating p- and n-doped layers, have an indirect band gap in real space due to the internal electric field that results from the migration of electrons from the donors to the acceptors.1 Tunneling-assisted electron-hole recombination leads to photoluminescence at this effective band gap energy,2 and tunneling-assisted absorption is possible at photon energies between the effective band gap and the direct (bulk) band gap.3

© 1986 Optical Society of America

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