Fundamental properties of advanced garnet and sapphire lasers

GUENTER HUBER

International Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 1986),
paper WC2

Fundamental properties of advanced garnet and sapphire lasers

GUENTER HUBER

International Quantum Electronics Conference 1986

San Francisco, California United States
9–13 June 1986
ISBN: 0-936659-11-4

From the session
CLEO/IQEC Joint Symposium: New Solid-State Laser Materials (WC)

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G. HUBER, "Fundamental properties of advanced garnet and sapphire lasers," in International Quantum Electronics Conference, M. Richardson, C. Tang, D. Grischkowsky, and T. Hansch, eds., OSA Technical Digest (Optica Publishing Group, 1986), paper WC2.

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Abstract

This paper reviews the fundamental spectroscopic and laser properties of Cr-doped garnets (740 640 nm) under laser and flashlamp pumping as well as cw-room-temperature operation of TI-doped sapphire (720-1100 cm) and Cr-sensitized Nd Tm, Ho garnets (1060. 1862. 2086 nm) under laser pumping.

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