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  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1984),
  • paper ThBB2

Optical Transition in Quantum Wells: Valence Band Mixing, Confined and Extended Excitons

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Abstract

Because of the novel optical and electronic properties associated with their lowered dimensionality, quantum-well structures (QWS) are currently attracting much interest in fundamental semiconductor physics and for optoelectronic device applications. QWS of extremely high quality have been fabricated using the GaAs/AlGaAs system, and they have been extensively investigated during the last 5 years. The layered structure of QWS defines a natural axis of quantization along the normal to the interfaces, z, and induces profound modifications of all the physical properties: energy band structure, wave-function symmetry, carrier confinement.

© 1984 Optical Society of America

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