Abstract
Because of the novel optical and electronic properties associated with their lowered dimensionality, quantum-well structures (QWS) are currently attracting much interest in fundamental semiconductor physics and for optoelectronic device applications. QWS of extremely high quality have been fabricated using the GaAs/AlGaAs system, and they have been extensively investigated during the last 5 years. The layered structure of QWS defines a natural axis of quantization along the normal to the interfaces, z, and induces profound modifications of all the physical properties: energy band structure, wave-function symmetry, carrier confinement.
© 1984 Optical Society of America
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