Abstract

Recently a GaInAsP/InP surface-emitting (SE) injection laser (λ = 1.3 μm) was demonstrated with a threshold current of 50 mA at 77 K under pulsed condition, which operated up to 140 K.¹ It seems easier to use the GaAlAs/GaAs system for room-temperature operation, because it has a large characteristic temperature coefficient of the threshold current To at near room temperature.² Moreover, the GaAlAs/GaAs material has relatively small absorption loss³ that is preferable for a small-gain SE laser. We report the fabrication and pulsed operation of a GaAlAs/GaAs SE injection laser at 77 K and at room temperature.

© 1984 Optical Society of America