Multi-level Nonvolatile Photonic Memories Using Broadband Transparent Phase change materials

Jiawei Meng; Mario Miscuglio; Volker J. Sorger

doi:10.1364/IPRSN.2021.IF3A.2

OSA Advanced Photonics Congress 2021
OSA Technical Digest (Optica Publishing Group, 2021),
paper IF3A.2
•https://doi.org/10.1364/IPRSN.2021.IF3A.2

Multi-level Nonvolatile Photonic Memories Using Broadband Transparent Phase change materials

Jiawei Meng, Mario Miscuglio, and Volker J. Sorger

Integrated Photonics Research, Silicon and Nanophotonics 2021

Washington, DC United States
26–29 July 2021
ISBN: 978-1-943580-94-1

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Neuromorphic and Computational Photonics (IF3A)

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J. Meng, M. Miscuglio, and V. J. Sorger, "Multi-level Nonvolatile Photonic Memories Using Broadband Transparent Phase change materials," in OSA Advanced Photonics Congress 2021, B. Yang, F. Leo, A. Tauke-Pedretti, S. Arafin, M. Clerici, L. Caspani, L. Busse, M. Kats, J. Fan, W. Ming (Steve) Lee, D. Caplan, N. Parsons, W. Freude, C. Tremblay, D. Hillerkuss, K. Igarashi, H. Elgala, N. Guerrero Gonzalez, R. "Patty" Stabile, K. Jaeger, R. Saive, H. Aziz, and H. Tan, eds., OSA Technical Digest (Optica Publishing Group, 2021), paper IF3A.2.

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Abstract

Here we demonstrate a low-loss multi-state photonic memory using broadband transparent phase change materials (GeSbSe), which can be efficiently reprogrammed on-chip.

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