Influence of the modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot (QD) lasers is studied both experimentally and theoretically. It is shown that in the case of short cavities, there is an increase in the lasing power component corresponding to ground-state optical transitions of QDs as the p-doping level grows. However, in the case of long cavities, higher dopant concentrations may have an opposite effect on the output power. An optimal design of laser geometry and an optimal doping level are discussed.
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