Linear propagation properties for a 300 nm film height Silicon Nitride photonic integration platform in the optical telecom C-band

Luis A. Bru; Gloria Micó; Daniel Pastor; Daniel Pérez; David Doménech; Ana M. Sánchez; Josep M. Cirera; Javier Sánchez; Carlos Domínguez; Pascual Muñoz; Pascual Muñoz

doi:10.1364/IPRSN.2017.IW2A.6

Advanced Photonics 2017 (IPR, NOMA, Sensors, Networks, SPPCom, PS)
OSA Technical Digest (online) (Optica Publishing Group, 2017),
paper IW2A.6
•https://doi.org/10.1364/IPRSN.2017.IW2A.6

Linear propagation properties for a 300 nm film height Silicon Nitride photonic integration platform in the optical telecom C-band

Luis A. Bru, Gloria Micó, Daniel Pastor, Daniel Pérez, David Doménech, Ana M. Sánchez, Josep M. Cirera, Javier Sánchez, Carlos Domínguez, and Pascual Muñoz

Integrated Photonics Research, Silicon and Nanophotonics 2017

New Orleans, Louisiana United States
24–27 July 2017
ISBN: 978-1-943580-30-9

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3D Silicon Photonics and Silicon Nitride (IW2A)

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L. A. Bru, G. Micó, D. Pastor, D. Pérez, D. Doménech, A. M. Sánchez, J. M. Cirera, J. Sánchez, C. Domínguez, and P. Muñoz, "Linear propagation properties for a 300 nm film height Silicon Nitride photonic integration platform in the optical telecom C-band," in Advanced Photonics 2017 (IPR, NOMA, Sensors, Networks, SPPCom, PS), OSA Technical Digest (online) (Optica Publishing Group, 2017), paper IW2A.6.

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Abstract

In this paper we report on the characterization of the propagation loss, group index, dispersion, birefringence, and thermo-optic phase shift of Si₃N₄ strip waveguides with guiding film height of 300 nm fabricated using low-preassure chemical vapour deposition.

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