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Conferences > IPRSN > 2015 > IT3A > IT3A.3

Direct-band-gap, Pseudo Single Crystal GeSn on Amorphous Layers towards 3D Integrated Photonics and Flexible Photonics

Haofeng Li, Xiaoxin Wang, and Jifeng Liu

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Abstract

High-crystallinity, direct-band-gap Ge0.89Sn0.11 is achieved at <450°C on amorphous dielectric layers and flexible substrates. The geometrically confined growth of pseudo-single-crystal Ge0.89Sn0.11 enables monolithic, large-scale 3D Si photonics.

© 2015 Optical Society of America

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