Abstract
A new concept for light emitting diodes in silicon capable of emitting 1.55 μm is reported. It utilizes D1-band luminescence from a dislocation network in silicon. The dislocation network is created in a reproducible manner by silicon wafer direct bonding. A MOS-LED on silicon substrate and a novel two-electrode device in a thin SOI layer using p-n junctions are demonstrated. The maximum efficiency is expected to exceed 1% at room temperature.
© 2014 Optical Society of America
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