Abstract
We present the latest progress in Ge-on-Si lasers and propose improved device design and fabrication, including enhanced n-type doping, strain engineering, and novel quantum well design, to achieve lasing performance comparable to III–V lasers.
© 2013 Optical Society of America
PDF ArticleMore Like This
Jifeng Liu
SM3O.1 CLEO: Science and Innovations (CLEO:S&I) 2014
Jifeng Liu
IW4A.4 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2014
Jifeng Liu, Xiaochen Sun, Rodolfo Camacho-Aguilera, Yan Cai, Lionel C. Kimerling, and Jurgen Michel
FMH1 Frontiers in Optics (FiO) 2010