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Electroluminescence of Erbium Doped Silicon Nitride Films

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Abstract

Electroluminescence at 980nm and 1535nm from erbium-doped silicon nitride films was reported and the Er effective excitation cross section was measured under electrical pumping. .Erbium electroluminescence is observed at voltages as low as 5V.

© 2010 Optical Society of America

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