Investigation of Gain-Bandwidth Limitations in Separate Absorption, Charge and Multiplication InAlAs/InGaAs Avalanche Photodiodes using Frozen Field Monte Carlo Simulations

Hektor T. J. Meier; Denis Dolgos; Markus Blaser; Bernd Witzigmann

doi:10.1364/IPRSN.2010.IWD3

Integrated Photonics Research, Silicon and Nanophotonics and Photonics in Switching
OSA Technical Digest (CD) (Optica Publishing Group, 2010),
paper IWD3
•https://doi.org/10.1364/IPRSN.2010.IWD3

Investigation of Gain-Bandwidth Limitations in Separate Absorption, Charge and Multiplication InAlAs/InGaAs Avalanche Photodiodes using Frozen Field Monte Carlo Simulations

Hektor T. J. Meier, Denis Dolgos, Markus Blaser, and Bernd Witzigmann

Integrated Photonics Research, Silicon and Nanophotonics 2010

Monterey, California United States
25–28 July 2010
ISBN: 978-1-55752-895-7

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Modeling and Simulation IV: Optoelectronics (IWD)

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H. T. J. Meier, D. Dolgos, M. Blaser, and B. Witzigmann, "Investigation of Gain-Bandwidth Limitations in Separate Absorption, Charge and Multiplication InAlAs/InGaAs Avalanche Photodiodes using Frozen Field Monte Carlo Simulations," in Integrated Photonics Research, Silicon and Nanophotonics and Photonics in Switching, OSA Technical Digest (CD) (Optica Publishing Group, 2010), paper IWD3.

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Abstract

Separate absorption, charge and multiplication (SACM) avalanche photodiodes (APDs) are investigated using a frozen field Monte Carlo (MC) approach. Gain-bandwidth limitations are analyzed by investigation of carrier arrival times at various positions within the device.

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