Traveling-Wave High-Speed Silicon Modulator

Dazeng Feng; Dawei Zheng; Tom Smith

doi:10.1364/IPRA.2006.ITuB4

Integrated Photonics Research and Applications/Nanophotonics
Technical Digest (CD) (Optica Publishing Group, 2006),
paper ITuB4
•https://doi.org/10.1364/IPRA.2006.ITuB4

Traveling-Wave High-Speed Silicon Modulator

Dazeng Feng, Dawei Zheng, and Tom Smith

Integrated Photonics Research and Applications 2006

Uncasville, Connecticut United States
24–26 April 2006
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Modulators (ITuB)

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D. Feng, D. Zheng, and T. Smith, "Traveling-Wave High-Speed Silicon Modulator," in Integrated Photonics Research and Applications/Nanophotonics, Technical Digest (CD) (Optica Publishing Group, 2006), paper ITuB4.

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Abstract

We have designed a high-speed, traveling-wave Mach-Zehnder modulator on a silicon- on-insulator (SOI) platform. High-speed optical modulation is realized by varying the depletion region of a reverse biased p-n junction. Both small-signal 3dB bandwidth and large-signal eye diagram simulations demonstrate NRZ signal modulation exceeding 40 Gbps.

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