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Conferences > IPR > 2002 > IFA > IFA5

Solid state absorption attenuator in silicon-on-insulator with MHz bandwidth

I.E. Day, R. Whiteman, A.A. House, A.P. Knights, J. Drake, and M. Asghari

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Abstract

Solid state variable optical attenuator (VOA) fabricated in silicon-on-insulator material (SOI) with high efficiency, high speed (>2MHz) and no inherent polarisation dependence with a manufacturable fabrication process suitable for high levels of integration is presented.

© 2002 Optical Society of America

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