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Simulation of temperature dependent 1.3µm laser characteristics: Impact of doping and AlGaInAs

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Abstract

The temperature performance of 1.3µm InGaAsP- and AlGaInAs-multiple-quantum-well lasers is analyzed using a detailed microscopic simulation. The static and dynamic behavior is compared to measurements and the high temperature performance of AlGaInAs-devices is discussed.

© 2001 Optical Society of America

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