ENHANCEMENT OF PROPAGATION CHARACTERISTICS IN ALL-SILICON WAVEGUIDE BY ION IMPLANTATION.

Giuseppe Cocorullo; Francesco G. Della Corte; Mario Iodice; Ivo Rendina; Pasqualina M. Sarro

Integrated Photonics Research
OSA Technical Digest (Optica Publishing Group, 1998),
paper ITuK2

ENHANCEMENT OF PROPAGATION CHARACTERISTICS IN ALL-SILICON WAVEGUIDE BY ION IMPLANTATION.

Giuseppe Cocorullo, Francesco G. Della Corte, Mario Iodice, Ivo Rendina, and Pasqualina M. Sarro

Integrated Photonics Research 1998

British Columbia Canada
ISBN: 1-55752-521-8

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Novel Silicon Based Structures (ITuK)

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G. Cocorullo, F. G. Della Corte, M. Iodice, I. Rendina, and P. M. Sarro, "ENHANCEMENT OF PROPAGATION CHARACTERISTICS IN ALL-SILICON WAVEGUIDE BY ION IMPLANTATION.," in Integrated Photonics Research, Vol. 4 of OSA Technical Digest (Optica Publishing Group, 1998), paper ITuK2.

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Abstract

A 7.0 dB/cm propagation loss improvement and higher confinement are achieved by ion-implantation in all-silicon waveguides matched to fiber size. Simulations for optimized structures predict 4.0 dB/cm attenuation.

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