Abstract

We use a novel, asymmetric vertical twin-waveguide structure to demonstrate the monolithic integration of a 1.55µm wavelength InGaAsP/InP multiple quantum well (MQW) laser and a semiconductor optical amplifier. The laser and amplifier share the same strained InGaAsP MQW active layer, grown by gas-source molecular beam epitaxy. The asymmetric twin-waveguide structure uses the difference in modal gains to discriminate between the even and odd modes. An on/off ratio of 18dB at the SOA output is observed, with the amplifier current switched between zero and 3 kA/cm².

© 1998 Optical Society of America