Abstract

Electroabsorption modulators (EAMs) of the Quantum-Confined Stark-Effect type [1, 2] axe most favorable for high-bitrate distribution-networks [3] which require transmitters with high bandwidth, high extinction ratio and controlled chirp [4, 5]. For high-bitrate applications a strong Staxk-shift is needed at low drive-voltages for an effective intensity modulation at high extinction ratios. The bandwidth of the EAMs is mainly determined by their intrinsic depletion layer capacity. Devices for high-bitrate applications with large intrinsic layer thicknesses need enhanced Staxk-shift efficiencies of at least 0.70nm/(kV/cm), because only moderate fieldstrengths can be achieved in the quantum well region. The use of Si-bipolar driver-ICs in commercial applications limits the modulation-voltage swing to 2 V, and an adjustment of absorption and chirp, using a bias-voltage, is not practicable.

© 1996 Optical Society of America