Abstract
The optoelectronic properties of hydrogenated amorphous silicon (α-Si:H) has been always considered almost exclusively for the fabrication of wide-area low-cost photovoltaic panels. For this reason the optical characteristics of this material has been extensively studied mainly in the wavelength range from 300 to 750 nm. In recent times, however, interesting applications have been proposed in the optical communication area, especially for photon detection at the visible wavelength of 670 nm. The strong absorption coefficient of a-Si:H, close to 104 cm−1 at this wavelength, allows in fact the realization of thin photodetectors, then particularly suitable for the realization of on-chip point-to-point optical interconnections [1],
© 1996 Optical Society of America
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