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Conferences > IPR > 1996 > ITuA > ITuA3

Bandstructure and Modal Gain of Partially Interdiffused InGaAs/GaAs/AlGaAs SQW Lasers

Rafael Gómez-Alcalà, Francisco Javier Fraile-Pelaez, and Ignacio Esquivias-Moscardó

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Abstract

Interdiffusion is a fabrication technique which is gaining interest in many applications [4] [5] [7] [3] [6]. It modifies the composition of the quantum well yielding a non square potential profile [9]. In order to analyze the effect of interdiffusion on quantum well properties the diffusion length (Ld) is used as a parameter. This is the product of the annealing time and the diffusion coefficient.

© 1996 Optical Society of America

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