Abstract

The role of transport in determining the high frequency response of quantum well lasers has been studied in depth lately in an effort to bring the calculated frequency response into line with various experimental results[l-3]. In these descriptions a transport factor is introduced which describes the exchange of electrons(holes) between the n- contact(p-contact) and the well. The mechanism of transport is considoed to be diffusion in these regions and the concentration of carriers is introduced as a new variable resulting in a third rate equation. However the carrier transport is not considered for the carriers on the far side of the well. Also, in these studies the loss of gain with increasing power level is modeled via the non-linear gain or gain compression factor which is the standard phenomenological aproach.

© 1993 Optical Society of America