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Band Structure Dependence of Carrier Transport Effects Direct Modulation of Quantum Well Lasers

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Abstract

Two forms of carrier transport impose upper limits on the maximum modulation bandwidth of quantum well lasers: real-space and state-space transport [1-3]. The former refers to carrier transport across the barrier region[2], while the latter refers to capture of carriers from the 3-D electronic states in the barrier region to the 2-D electronic states in the quantum well[3]. Both effects can be significant and must be considered concurrently. So far, real space transport in the barrier region has been considered in the context of diffusion only, i.e., a flat-band situation was assumed. While this may be applicable in structures with step-barrier designs, it is not the case in graded barrier designs, in which a substantial electric field is expected to be present. It is the purpose of this paper to consider the effect of such band structure variations on the overall modulation bandwidth limitation.

© 1993 Optical Society of America

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