Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Measurement and Calculation of Carrier-Induced Changes of Refractive Index and Absorption in GaInAsP Near the Band Edge

Not Accessible

Your library or personal account may give you access

Abstract

The carrier-induced refractive index change of a IIIV heterojunction is very large[1]. It is produced by bandfilling, band-gap shrinkage, and plasma dispersion. Optical switches utilizing this large index change have already been demonstrated[2,3]. At the photon energies near Eg, however, measurement is difficult due to absorption, so that the experimental verification has not been completely done[4] and the design of the carrier- induced optical devices is still difficult.

© 1993 Optical Society of America

PDF Article
More Like This
Ultrafast carrier-induced changes of absorption and refractive index in GaAs

T. Gong, W. L. Nighan, K. Gzara, and P. M. Fauchet
MQ5 OSA Annual Meeting (FIO) 1990

Femtosecond carrier dynamics near the band edge of In0.53Ga0.47As

B. C. Tousley, S. M. Mehta, A. I. Lobad, P. J. Rodney, P. M. Fauchet, and G. W. Wicks
QThH26 Quantum Electronics and Laser Science Conference (CLEO:FS) 1993

Enhanced Photo-Induced Refractive Index Changes in Optical Fibers via Low Temperature Hydrogen Loading

R.M. Atkins, V. Mizrahi, and P.J. Lemaire
CPD20 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved