Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

The Use of Deep-Level Dopants in Silicon-on-Insulator Optical Waveguide Modulators

Not Accessible

Your library or personal account may give you access

Abstract

The dependence of silicon’s absorption coefficient at λ = 1.55 µm on the charge state of deep levels is modeled and measured experimentally. Improved designs for p-i-n rib waveguide modulators based on this effect are presented.

© 2009 Optical Society of America

PDF Article
More Like This
Electro-Optic Modulator on Silicon-on-Insulator Substrates Using Ring Resonators

S. Pradhan, B. Schmidt, L. Martinez, Q. Xu, V. R. Almeida, C. Barrios, and M. Lipson
CMG2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2005

Tunable electro-optic modulator on silicon-on-insulator substrates using ring resonators

Sameer S. Pradhan, Vilson R. Almeida, Carlos A. Barrios, and Michal Lipson
IWA5 Integrated Photonics Research (IPR) 2004

Optical Modulation Using Depletion-Mode PN-Junctions in Thin Silicon-On-Insulator Waveguides

M. A. Webster, R. M. Pafchek, G. Sukumaran, and T. L. Koch
ITuB1 Integrated Photonics Research and Applications (IPR) 2006

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.