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Enhanced Electro-Optic Phase Modulation in InGaAs Quantum Posts

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Abstract

Phase modulation in waveguides having self-assembled InGaAs quantum posts were studied at 1500 nm. Phase modulation enhancement of 29% over devices containing InGaAs quantum wells of similar composition was observed indicating significant electro-optic coefficient increase in quantum posts.

© 2008 Optical Society of America

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