Nanostructure Patterned Active Regions for Semiconductor Diode Lasers

J. J. Coleman; V. C. Elarde; V. B. Verma

doi:10.1364/IPNRA.2008.IWE1

Integrated Photonics and Nanophotonics Research and Applications
(Optica Publishing Group, 2008),
paper IWE1
•https://doi.org/10.1364/IPNRA.2008.IWE1

Nanostructure Patterned Active Regions for Semiconductor Diode Lasers

J. J. Coleman, V. C. Elarde, and V. B. Verma

Integrated Photonics and Nanophotonics Research and Applications 2008

Boston, Massachusetts United States
13–16 July 2008
ISBN:

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J. J. Coleman, V. C. Elarde, and V. B. Verma, "Nanostructure Patterned Active Regions for Semiconductor Diode Lasers," in Integrated Photonics and Nanophotonics Research and Applications, (Optica Publishing Group, 2008), paper IWE1.

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Abstract

We describe a nanoscale selective area epitaxy process for uniform patterned quantum dot growth and present laser device results for both conventional quantum dot lasers and a novel inverted quantum dot (nanopore) laser structure.

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