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Integrated GeSi Electro-Absorption Modulators on SOI

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Abstract

We demonstrate 1.2 GHz waveguide-integrated GeSi electro-absorption modulators on SOI platform with an extinction ratio of >7 dB over a broad wavelength range of 1510–1552 nm and an ultralow energy consumption of 50 fJ/bit.

© 2008 Optical Society of America

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