Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Integrated Photonics and Nanophotonics Research and Applications / Slow and Fast Light
  • OSA Technical Digest (CD) (Optica Publishing Group, 2007),
  • paper IWB3
  • https://doi.org/10.1364/IPNRA.2007.IWB3

Design and Simulation of Silicon-based p-i-n Carrier Injection Electro-optical Waveguide Modulators

Not Accessible

Your library or personal account may give you access

Abstract

This paper presents the simulation results of a forward biased carrier injection silicon p-i-n modulator with improved carrier injection and optical confinement structure, demonstrating that the fast response time (rise time of 0. 663ns and a fall time of 0. 249ns) can be achieved.

© 2007 Optical Society of America

PDF Article
More Like This
Electro-Optical Modulator Based on the p+-n+-n+ Transistor Structure Integrated on SOI Substrate

Ricky W. Chuang, Mao-Teng Hsu, and Shen-Horng Chou
JTuI5 CLEO: Applications and Technology (CLEO:A&T) 2011

Silicon Electro-optic Modulators Based on p-i-n Diodes Integrated Microdisk and Microring Resonators

Linjie Zhou and Andrew W. Poon
CTuU2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2006

Compact Carrier Injection Based Mach-Zehnder Modulator in Silicon

S. J. Spector, M. E. Grein, R. T. Schulein, M. W. Geis, J. U. Yoon, D. M. Lennon, F. Gan, F. X. Kärtner, and T. M. Lyszczarz
ITuE5 Integrated Photonics and Nanophotonics Research and Applications (IPR) 2007

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.