Temperature tuning of the resonant photonic band gap of InAsP/InP Bragg-spaced quantum wells grown by MOCVD

Wei Yan; Tao Wang; Xiao-Ming Li

doi:10.1364/IONT.2012.IF4A.22

International Photonics and Optoelectronics Meetings
OSA Technical Digest (online) (Optica Publishing Group, 2012),
paper IF4A.22
•https://doi.org/10.1364/IONT.2012.IF4A.22

Temperature tuning of the resonant photonic band gap of InAsP/InP Bragg-spaced quantum wells grown by MOCVD

Wei Yan, Tao Wang, and Xiao-Ming Li

Information Optoelectronics, Nanofabrication and Testing 2012

Wuhan China
1–2 November 2012
ISBN: 978-1-55752-960-2

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IONT Poster Session II (IF4A)

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W. Yan, T. Wang, and X. Li, "Temperature tuning of the resonant photonic band gap of InAsP/InP Bragg-spaced quantum wells grown by MOCVD," in International Photonics and Optoelectronics Meetings, OSA Technical Digest (online) (Optica Publishing Group, 2012), paper IF4A.22.

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Abstract

In this article, we presented a study of InAs_0.04P_0.96/InP Bragg-spaced quantum wells (BSQWs), a type of resonant photonic band gap structure (RPBG), grown by metal organic chemical vapor deposition (MOCVD). The quantum wells were characterized by photoluminescence (PL), double-crystal x-ray diffraction (DC-XRD), and reflection spectra. We found that the BSQWs structure grown at 580 °C appears to be extremely abrupt, uniform, free of misfit dislocations, and narrow PL line width. By researching the reflection spectra at different temperature, we presented a theoretical analysis of the changes in RPBG, and proposed a new scheme of using the temperature to control the resonant photonic band gap structure.

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