Optimal Design of FPGA Switch Matrix based on Non-Volatile ReRAM

GuoSheng Yu; JinCai Chen; GongYe Zhou; ZongJing Cheng

doi:10.1364/IONT.2012.IF4A.03

International Photonics and Optoelectronics Meetings
OSA Technical Digest (online) (Optica Publishing Group, 2012),
paper IF4A.03
•https://doi.org/10.1364/IONT.2012.IF4A.03

Optimal Design of FPGA Switch Matrix based on Non-Volatile ReRAM

GuoSheng Yu, JinCai Chen, GongYe Zhou, and ZongJing Cheng

Information Optoelectronics, Nanofabrication and Testing 2012

Wuhan China
1–2 November 2012
ISBN: 978-1-55752-960-2

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IONT Poster Session II (IF4A)

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G. Yu, J. Chen, G. Zhou, and Z. Cheng, "Optimal Design of FPGA Switch Matrix based on Non-Volatile ReRAM," in International Photonics and Optoelectronics Meetings, OSA Technical Digest (online) (Optica Publishing Group, 2012), paper IF4A.03.

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Abstract

The ReRAM is a NVM device with very small cell and high storage density. Therefore, it is an ideal storage device as an application to replace the storage cell of the FPGA switch matrix.

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