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Rapid Adiabatic 3 dB Coupler with 50±1% Splitting Over 200 nm including S, C and L Bands in 45 nm CMOS Platform

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Abstract

We demonstrate a 70 µm-long silicon rapid adiabatic coupler (RAC) with <0.07 dB insertion loss over 50 nm and power splitting ratio 50 ± 1% over 200 nm bandwidth fabricated in the commercial 45RF ‘zero change’ CMOS electronics-photonics platform.

© 2021 The Author(s)

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Broadband Repeatable <0.025 dB Average Loss Rapid Adiabatic Based 3-dB Coupler in a 45 nm SOI CMOS Process

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