Electrophysical Anisotropy of Periodic Surface Structures Induced by Femtosecond Laser on Amorphous Silicon

D.V. Shuleiko; M.N. Martyshov; S.V. Zabotnov; S.V. Zabotnov; D.E. Presnov; D.E. Presnov; D.E. Presnov; A.G. Kazanskii; P.K. Kashkarov; P.K. Kashkarov

doi:10.1364/FIO.2020.JTh4A.10

Frontiers in Optics / Laser Science
OSA Technical Digest (Optica Publishing Group, 2020),
paper JTh4A.10
•https://doi.org/10.1364/FIO.2020.JTh4A.10

Electrophysical Anisotropy of Periodic Surface Structures Induced by Femtosecond Laser on Amorphous Silicon

D.V. Shuleiko, M.N. Martyshov, S.V. Zabotnov, D.E. Presnov, A.G. Kazanskii, and P.K. Kashkarov

Frontiers in Optics 2020

Washington, DC United States
14–17 September 2020
ISBN: 978-1-943580-80-4

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Joint Poster Session IVA (JTh4A)

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D. V. Shuleiko, M. N. Martyshov, S. V. Zabotnov, D. E. Presnov, A. G. Kazanskii, and P. K. Kashkarov, "Electrophysical Anisotropy of Periodic Surface Structures Induced by Femtosecond Laser on Amorphous Silicon," in Frontiers in Optics / Laser Science, B. Lee, C. Mazzali, K. Corwin, and R. Jason Jones, eds., OSA Technical Digest (Optica Publishing Group, 2020), paper JTh4A.10.

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Abstract

Amorphous silicon films were modified by femtosecond laser pulses. Revealed on irradiated surface are micron-scale laser-induced periodic structures that affect anisotropy of dark conductivity, photoconductivity and carrier mobility within the film.

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