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Ni-TaN Nanocomposite Absorber For Next-Generation Extreme Ultraviolet Lithography

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Abstract

A thin Ni-TaN nano-composite absorber is studied for next-generation EUV lithography. We show that the performance is insensitive to the size and location of nanoparticles, and that such an absorber can greatly reduce HV bias.

© 2016 Optical Society of America

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