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Implementation of an Optical Binary Cell of Random Access Memory based on Electro-Optic Effect in Mach-Zehnder Interferometer

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Abstract

An optical binary storage cell of a random access memory is demonstrated for Read/Write operation based on the electro-optic effect of Mach Zehnder Interferometer which can be arrayed to form optical memory units.

© 2015 Optical Society of America

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